Invention Grant
- Patent Title: Method for forming isolation structure
- Patent Title (中): 隔离结构形成方法
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Application No.: US13881560Application Date: 2011-11-02
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Publication No.: US08969172B2Publication Date: 2015-03-03
- Inventor: Naoko Nakamoto , Katsuchika Suzuki , Shinji Sugahara , Tatsuro Nagahara
- Applicant: Naoko Nakamoto , Katsuchika Suzuki , Shinji Sugahara , Tatsuro Nagahara
- Applicant Address: US NJ Somerville
- Assignee: AZ Electronic Materials USA Corp.
- Current Assignee: AZ Electronic Materials USA Corp.
- Current Assignee Address: US NJ Somerville
- Agent Sangya Jain
- Priority: JP2010-248290 20101105
- International Application: PCT/JP2011/075265 WO 20111102
- International Announcement: WO2012/060399 WO 20120510
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762 ; H01L21/02 ; H01L29/06 ; H01L21/3105
Abstract:
[Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress.[Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
Public/Granted literature
- US20130214383A1 METHOD FOR FORMING ISOLATION STRUCTURE Public/Granted day:2013-08-22
Information query
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