Invention Grant
- Patent Title: Laminated transferable interconnect for microelectronic package
- Patent Title (中): 用于微电子封装的层压可转移互连
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Application No.: US12959549Application Date: 2010-12-03
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Publication No.: US08969176B2Publication Date: 2015-03-03
- Inventor: Ward G. Fillmore , William J. Davis
- Applicant: Ward G. Fillmore , William J. Davis
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/00 ; B81C1/00 ; H01L23/544 ; H01L21/683
Abstract:
A package for a plurality of semiconductor devices having: an electrical interconnect structure, comprising: an electrical interconnect structure; and an active device structure, comprising the plurality of semiconductor devices on an active device substrate. The electrical interconnect structure is bonded to the active device structure and the electrical interconnect structure provides electrical interconnection among the semiconductor devices.
Public/Granted literature
- US20120139100A1 LAMINATED TRANSFERABLE INTERCONNECT FOR MICROELECTRONIC PACKAGE Public/Granted day:2012-06-07
Information query
IPC分类:
