Invention Grant
- Patent Title: Nanowire devices
- Patent Title (中): 纳米线设备
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Application No.: US13885258Application Date: 2011-11-02
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Publication No.: US08969179B2Publication Date: 2015-03-03
- Inventor: Bernd W Gotsmann , Siegfried F. Karg , Heike E. Riel
- Applicant: Bernd W Gotsmann , Siegfried F. Karg , Heike E. Riel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Priority: EP10191466 20101117
- International Application: PCT/IB2011/054864 WO 20111102
- International Announcement: WO2012/066444 WO 20120524
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786 ; B82Y10/00 ; B82Y40/00
Abstract:
A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.
Public/Granted literature
- US20130228751A1 NANOWIRE DEVICES Public/Granted day:2013-09-05
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