Invention Grant
- Patent Title: Method for epitaxial layer overgrowth
- Patent Title (中): 外延层过度生长的方法
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Application No.: US13440616Application Date: 2012-04-05
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Publication No.: US08969181B2Publication Date: 2015-03-03
- Inventor: Ludovic Godet , Morgan D. Evans , Christopher R. Hatem
- Applicant: Ludovic Godet , Morgan D. Evans , Christopher R. Hatem
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/02 ; H01L21/265 ; H01L21/266
Abstract:
Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.
Public/Granted literature
- US20120258583A1 METHOD FOR EPITAXIAL LAYER OVERGROWTH Public/Granted day:2012-10-11
Information query
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