Invention Grant
- Patent Title: Method for fabricating a porous semiconductor body region
- Patent Title (中): 多孔半导体体区域的制造方法
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Application No.: US13903784Application Date: 2013-05-28
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Publication No.: US08969184B2Publication Date: 2015-03-03
- Inventor: Hans-Joachim Schulze , Anton Mauder , Francisco Javier Santos Rodriguez
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: SpryIP, LLC
- Priority: DE102011012721 20110301
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/762 ; H01L29/861
Abstract:
A method for fabricating a porous semiconductor body region, including producing at least one trench in a semiconductor body, starting from a surface of the semiconductor body, producing at least one porous semiconductor body region in the semiconductor body starting from the at least one trench at least along a portion of the side walls of the trench, and filling the trench with a semiconductor material of the semiconductor body.
Public/Granted literature
- US20130337640A1 METHOD FOR FABRICATING A POROUS SEMICONDUCTOR BODY REGION Public/Granted day:2013-12-19
Information query
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