Invention Grant
- Patent Title: Self-aligned contacts
- Patent Title (中): 自对准接触
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Application No.: US13859284Application Date: 2013-04-09
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Publication No.: US08969187B2Publication Date: 2015-03-03
- Inventor: Dechao Guo , Wilfried E. A. Haensch , Shu-Jen Han , Chung-Hsun Lin
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/28 ; H01L21/768 ; H01L29/66 ; H01L29/51
Abstract:
A method of forming a gate structure with a self-aligned contact is provided and includes sequentially depositing a sacrificial layer and a secondary layer onto poly-Si disposed at a location of the gate structure, encapsulating the sacrificial layer, the secondary layer and the poly-Si, removing the sacrificial layer through openings formed in the secondary layer and forming silicide within at least the space formally occupied by the sacrificial layer.
Public/Granted literature
- US20130230978A1 SELF-ALIGNED CONTACTS Public/Granted day:2013-09-05
Information query
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