Invention Grant
US08969193B2 Method of producing a semiconductor device having an interconnect through the substrate
有权
制造具有穿过该衬底的互连的半导体器件的方法
- Patent Title: Method of producing a semiconductor device having an interconnect through the substrate
- Patent Title (中): 制造具有穿过该衬底的互连的半导体器件的方法
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Application No.: US13956274Application Date: 2013-07-31
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Publication No.: US08969193B2Publication Date: 2015-03-03
- Inventor: Jochen Kraft , Franz Schrank , Martin Schrems
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: EP12178878 20120801
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/48
Abstract:
A semiconductor substrate (1) is provided on a main surface (14) with an intermetal dielectric (4) including metal planes (5) and on an opposite rear surface (15) with an insulation layer (2) and an electrically conductive connection pad (7). An etch stop layer (6) is applied on the intermetal dielectric to prevent a removal of the intermetal dielectric above the metal planes during subsequent method steps. An opening (9) having a side wall (3) and a bottom (13) is formed from the main surface through the substrate above the connection pad. A side wall spacer (10) is formed on the side wall by a production and subsequent partial removal of a dielectric layer (11). The insulation layer is removed from the bottom to uncover an area of the connection pad. A metal layer is applied in the opening and is provided for an interconnect through the substrate.
Public/Granted literature
- US20140038410A1 METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING AN INTERCONNECT THROUGH THE SUBSTRATE Public/Granted day:2014-02-06
Information query
IPC分类:
