Invention Grant
- Patent Title: Method and apparatus for plasma processing
- Patent Title (中): 等离子体处理方法和装置
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Application No.: US13960831Application Date: 2013-08-07
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Publication No.: US08969211B2Publication Date: 2015-03-03
- Inventor: Satoru Muto , Tetsuo Ono , Yasuo Ohgoshi , Hirofumi Eitoku
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2013-080901 20130409
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/3065

Abstract:
The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.
Public/Granted literature
- US20140302682A1 METHOD AND APPARATUS FOR PLASMA PROCESSING Public/Granted day:2014-10-09
Information query
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