Invention Grant
- Patent Title: Method for single side texturing
- Patent Title (中): 单面纹理方法
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Application No.: US13576925Application Date: 2011-02-11
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Publication No.: US08969216B2Publication Date: 2015-03-03
- Inventor: Victor Prajapati , Joachim John
- Applicant: Victor Prajapati , Joachim John
- Applicant Address: BE BE
- Assignee: IMEC,Katholieke Universiteit Leuven, K.U. Leuven R&D
- Current Assignee: IMEC,Katholieke Universiteit Leuven, K.U. Leuven R&D
- Current Assignee Address: BE BE
- Agency: Knobbe Martens Olson & Bear LLP
- International Application: PCT/EP2011/052009 WO 20110211
- International Announcement: WO2011/098549 WO 20110818
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; H01L31/0236

Abstract:
A method for single side texturing of a crystalline semiconductor substrate (10) comprises: providing a substrate (10), for example a semiconductor substrate, comprising a first surface (12) and a second surface (14) opposite to one another with respect to the substrate (10); providing a masking layer (21) with a random pattern on the first surface (12) of the substrate (10); and etching the substrate (10) in a polishing solution, thereby texturing the first surface (12) of the substrate (10) and polishing the second surface (14) in a single wet etching step.
Public/Granted literature
- US20120295446A1 METHOD FOR SINGLE SIDE TEXTURING Public/Granted day:2012-11-22
Information query
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