Invention Grant
- Patent Title: Etching method, etching apparatus and storage medium
- Patent Title (中): 蚀刻方法，蚀刻装置和存储介质
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Application No.: US13443156Application Date: 2012-04-10
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Publication No.: US08969218B2Publication Date: 2015-03-03
- Inventor: Tsukasa Watanabe , Keisuke Egashira , Miyako Kaneko , Takehiko Orii
- Applicant: Tsukasa Watanabe , Keisuke Egashira , Miyako Kaneko , Takehiko Orii
- Applicant Address: JP Minato-Ku
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Minato-Ku
- Agency: Burr & Brown, PLLC
- Priority: JP2011-090256 20110414
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3105 ; H01L21/311 ; H01L21/67 ; H01L21/02
Abstract:
Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.
Public/Granted literature
- US20120264308A1 ETCHING METHOD, ETCHING APPARATUS AND STORAGE MEDIUM Public/Granted day:2012-10-18
Information query
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