Invention Grant
US08969709B2 Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters
有权
在制备具有轻掺杂发射体的半导体器件中使用含有铅 - 碲基氧化物的导电组合物
- Patent Title: Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters
- Patent Title (中): 在制备具有轻掺杂发射体的半导体器件中使用含有铅 - 碲基氧化物的导电组合物
-
Application No.: US13598861Application Date: 2012-08-30
-
Publication No.: US08969709B2Publication Date: 2015-03-03
- Inventor: Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
- Applicant: Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; C03C8/10 ; C03C8/16 ; C03C8/18 ; H01B1/22 ; H01L31/18
Abstract:
The present invention provides a process for using a thick-film conductive paste composition to form an electrode on a silicon semiconductor device, e.g, a photovoltaic cell, containing a lightly doped emitter. The thick-film paste comprises a source of an electrically conductive metal and a Pb—Te-based oxide dispersed in an organic medium. Also provided are devices made by the process and a photovoltaic cell comprising a lightly doped emitter and an electrode formed from the thick-film conductive paste composition.
Public/Granted literature
Information query
IPC分类:
