Invention Grant
- Patent Title: Photoelectronically active, chalcogen-based thin film structures incorporating tie layers
- Patent Title (中): 光电子活性的硫属元素薄膜结构
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Application No.: US13047139Application Date: 2011-03-14
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Publication No.: US08969720B2Publication Date: 2015-03-03
- Inventor: Jennifer E. Gerbi
- Applicant: Jennifer E. Gerbi
- Applicant Address: US MI Midland
- Assignee: Dow Global Technologies LLC
- Current Assignee: Dow Global Technologies LLC
- Current Assignee Address: US MI Midland
- Agency: Kagan Binder, PLLC
- Main IPC: H01L31/0272
- IPC: H01L31/0272 ; H01L21/02 ; C23C14/06 ; C23C14/34 ; C23C14/58

Abstract:
The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these structures and devices, and methods of using these structures and devices. According to principles of the present invention, the adhesion of PACB compositions is improved through the use of chalcogen-containing tie layers.
Public/Granted literature
- US20110253219A1 PHOTOELECTRONICALLY ACTIVE, CHALCOGEN-BASED THIN FILM STRUCTURES INCORPORATING TIE LAYERS Public/Granted day:2011-10-20
Information query
IPC分类: