Invention Grant
- Patent Title: High power RF circuit
- Patent Title (中): 大功率射频电路
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Application No.: US14041155Application Date: 2013-09-30
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Publication No.: US08969733B1Publication Date: 2015-03-03
- Inventor: Chong Mei , Michael J. Len , Hans P. Ostergaard
- Applicant: Anaren, Inc.
- Applicant Address: US NY East Syracuse
- Assignee: Anaren, Inc.
- Current Assignee: Anaren, Inc.
- Current Assignee Address: US NY East Syracuse
- Agency: Bond Schoeneck & King, PLLC
- Agent Daniel P. Malley
- Main IPC: H05K1/00
- IPC: H05K1/00 ; H05K1/02 ; H01P3/06 ; H01L23/12

Abstract:
The present invention is directed to an RF device that includes a ceramic layer characterized by a ceramic layer dielectric constant and includes an RF circuit arrangement having a predetermined geometry and predetermined electrical characteristics. The ceramic layer dissipates thermal energy generated by the RF circuit via substantially the entire ceramic surface area. A first dielectric layer comprises a thermoplastic material and has a predetermined first thickness and a first dielectric constant. The predetermined electrical characteristics of the RF circuit arrangement are a function of the ceramic layer dielectric constant. A relative softness of the thermoplastic material is a function of the RF device operating temperature.
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