Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13775411Application Date: 2013-02-25
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Publication No.: US08969739B2Publication Date: 2015-03-03
- Inventor: Toshiyuki Hayakawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; G06F1/16

Abstract:
According to one embodiment, a semiconductor device includes a housing including a first wall and a second wall opposite to the first wall, a board in the housing, a first supporter provided on the first wall and configured to support an end of the board in a direction substantially parallel to the first wall, a stopper in the housing, the stopper configured to support the board, and a second supporter provided on the second wall and configured to support the stopper.
Public/Granted literature
- US20140168882A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-06-19
Information query
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