Invention Grant
US08969775B2 High dynamic range pixel having a plurality of amplifier transistors 有权
具有多个放大器晶体管的高动态范围像素

High dynamic range pixel having a plurality of amplifier transistors
Abstract:
A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.
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