Invention Grant
US08969779B2 Photodetecting structure with photon sensing graphene layer(s) and vertically integrated graphene field effect transistor
有权
具有光子感测石墨烯层和垂直集成石墨烯场效应晶体管的光检测结构
- Patent Title: Photodetecting structure with photon sensing graphene layer(s) and vertically integrated graphene field effect transistor
- Patent Title (中): 具有光子感测石墨烯层和垂直集成石墨烯场效应晶体管的光检测结构
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Application No.: US13025853Application Date: 2011-02-11
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Publication No.: US08969779B2Publication Date: 2015-03-03
- Inventor: Martti Voutilainen , Markku Rouvala , Pirjo Pasanen
- Applicant: Martti Voutilainen , Markku Rouvala , Pirjo Pasanen
- Applicant Address: FI Espoo
- Assignee: Nokia Corporation
- Current Assignee: Nokia Corporation
- Current Assignee Address: FI Espoo
- Agency: Locke Lord LLP
- Main IPC: H01J40/14
- IPC: H01J40/14 ; H03K17/78 ; H01L27/00 ; G01J1/42 ; G01J3/51 ; G01J1/04
Abstract:
In accordance with an example embodiment of the present invention, an apparatus is provided, including a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a pre-amplifier for the photodetecting structure, where the graphene field effect transistor is vertically integrated to the photodetecting structure.
Public/Granted literature
- US20120205518A1 SENSING OF PHOTONS Public/Granted day:2012-08-16
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