Invention Grant
- Patent Title: Optoelectronic semiconductor chip and method for the production thereof
- Patent Title (中): 光电半导体芯片及其制造方法
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Application No.: US13883346Application Date: 2011-11-02
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Publication No.: US08969900B2Publication Date: 2015-03-03
- Inventor: Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Straβburg , Norwin von Malm
- Applicant: Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Straβburg , Norwin von Malm
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102010051286 20101112
- International Application: PCT/EP2011/069247 WO 20111102
- International Announcement: WO2012/062635 WO 20120518
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L33/02 ; H01L33/20 ; H01L33/50 ; H01L33/08 ; H01L33/24 ; B82Y40/00
Abstract:
An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
Public/Granted literature
- US20130328066A1 OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF Public/Granted day:2013-12-12
Information query
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