Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13896166Application Date: 2013-05-16
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Publication No.: US08969901B2Publication Date: 2015-03-03
- Inventor: Jin Young Choi , Jae Ho Han , Ki Seok Kim , Wan Ho Lee , Myeong Ha Kim , Hae Soo Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0052529 20120517; KR10-2013-0050080 20130503
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/40 ; H01L33/14 ; H01L33/42

Abstract:
A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.
Public/Granted literature
- US20130307007A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2013-11-21
Information query
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