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US08969905B2 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp 有权
半导体发光元件及半导体发光元件的制造方法及灯

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp
Abstract:
A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) formed on the upper surface (106c) of the laminated semiconductor layer (20); and a second electrode (108) formed on an exposed surface (104c) that is formed by partially cutting the laminated semiconductor layer (20), wherein the first electrode (111) includes a transparent electrode (109) containing a hole portion (109a) through which the upper surface (106c) of the laminated semiconductor layer (20) is exposed, a junction layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole portion (109a), and a bonding pad electrode (120) formed to cover the junction layer (110).
Abstract(Chinese):

本发明的半导体发光装置（1）包括：基板（101）; 包含形成在所述基板（101）上的发光层的层叠半导体层（20）; 形成在层叠半导体层（20）的上表面（106c）上的第一电极（111）; 以及形成在通过部分切割所述层叠半导体层（20）形成的暴露表面（104c）上的第二电极（108），其中所述第一电极（111）包括含有孔部分（109a）的透明电极（109） 层叠半导体层（20）的上表面（106c）通过其暴露，形成在孔部（109a）的底面（109b）和内壁（109d）上的接合层（110） 形成为覆盖接合层（110）的接合焊盘电极（120）。

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