Invention Grant
US08969926B2 Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
有权
具有低栅极 - 漏极电容和高栅极 - 源极电容的垂直GaN JFET
- Patent Title: Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
- Patent Title (中): 具有低栅极 - 漏极电容和高栅极 - 源极电容的垂直GaN JFET
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Application No.: US13675694Application Date: 2012-11-13
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Publication No.: US08969926B2Publication Date: 2015-03-03
- Inventor: Donald R. Disney
- Applicant: Avogy, Inc.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L27/085
- IPC: H01L27/085 ; H01L21/04
Abstract:
An embodiment of a vertical power device includes a III-nitride substrate, a drift region coupled to the III-nitride substrate and comprising a III-nitride material of a first conductivity type, and a channel region coupled to the drift region and comprising a III-nitride material of the first conductivity type. The vertical power device also includes a source region coupled to the channel region and comprising a III-nitride material of the first conductivity type, and a gate region coupled to the channel region. The gate region includes a III-nitride material of a second conductivity type. The vertical power device further includes a source-coupled region coupled to the drift region and electrically connected with the source region. The source-coupled region includes a III-nitride material of the second conductivity type.
Public/Granted literature
- US20140131775A1 VERTICAL GaN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOURCE CAPACITANCE Public/Granted day:2014-05-15
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