Invention Grant
US08969928B2 Transistors having a control gate and one or more conductive structures
有权
具有控制栅极和一个或多个导电结构的晶体管
- Patent Title: Transistors having a control gate and one or more conductive structures
- Patent Title (中): 具有控制栅极和一个或多个导电结构的晶体管
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Application No.: US12872814Application Date: 2010-08-31
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Publication No.: US08969928B2Publication Date: 2015-03-03
- Inventor: Mike Smith , Henry Jim Fulford
- Applicant: Mike Smith , Henry Jim Fulford
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/265 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/10
Abstract:
Transistors having a dielectric over a semiconductor, a control gate over the dielectric at a particular level, and one or more conductive structures over the dielectric at the particular level facilitate control of device characteristics of the transistor. The one or more conductive structures are between the control gate and at least one source/drain region of the transistor. The one or more conductive structures are electrically isolated from the control gate.
Public/Granted literature
- US20120049248A1 TRANSISTORS HAVING A CONTROL GATE AND ONE OR MORE CONDUCTIVE STRUCTURES Public/Granted day:2012-03-01
Information query
IPC分类:
