Invention Grant
- Patent Title: Replacement gate MOSFET with a high performance gate electrode
- Patent Title (中): 具有高性能栅电极的替代栅极MOSFET
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Application No.: US13780877Application Date: 2013-02-28
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Publication No.: US08969933B2Publication Date: 2015-03-03
- Inventor: Zhengwen Li , Dechao Guo , Randolph F. Knarr , Chengwen Pei , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong , Jian Yu , Jun Yuan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/423 ; H01L29/49 ; H01L29/66
Abstract:
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
Public/Granted literature
- US20130175641A1 REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE Public/Granted day:2013-07-11
Information query
IPC分类:
