Invention Grant
US08969935B2 Semiconductor memory device having plural cell capacitors stacked on one another and manufacturing method thereof
有权
具有彼此堆叠的多个电池电容器的半导体存储器件及其制造方法
- Patent Title: Semiconductor memory device having plural cell capacitors stacked on one another and manufacturing method thereof
- Patent Title (中): 具有彼此堆叠的多个电池电容器的半导体存储器件及其制造方法
-
Application No.: US13439423Application Date: 2012-04-04
-
Publication No.: US08969935B2Publication Date: 2015-03-03
- Inventor: Hiroyuki Uchiyama
- Applicant: Hiroyuki Uchiyama
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-082375 20110404
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02
Abstract:
Disclosed herein is a device that includes a semiconductor substrate having a first area, a plurality of cell transistors arranged on the first area of the semiconductor substrate, and a plurality of cell capacitors each coupled to an associated one of the cell transistors, the cell capacitors being provided so as to overlap with one another on the first area.
Public/Granted literature
Information query
IPC分类:
