Invention Grant
US08969948B2 Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication
有权
用于垂直NAND串的钨硅化物栅源，用于控制电流和电池柱的制造
- Patent Title: Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication
- Patent Title (中): 用于垂直NAND串的钨硅化物栅源，用于控制电流和电池柱的制造
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Application No.: US13852988Application Date: 2013-03-28
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Publication No.: US08969948B2Publication Date: 2015-03-03
- Inventor: Fatma A. Simsek-Ege , Krishna K. Parat
- Applicant: Fatma A. Simsek-Ege , Krishna K. Parat
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/423 ; H01L29/66 ; H01L29/788
Abstract:
A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use of the tungsten salicide is useful for eliminating an undesired etch-stop recess and an undesired floating gate that is formed when an Al oxide etch-stop layer is conventionally used.
Public/Granted literature
- US20140291747A1 Tungsten Salicide Gate Source For Vertical NAND String To Control On Current And Cell Pillar Fabrication Public/Granted day:2014-10-02
Information query
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