Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13795414Application Date: 2013-03-12
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Publication No.: US08969959B2Publication Date: 2015-03-03
- Inventor: Chang Su Jang
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon
- Priority: KR10-2012-0149347 20121220
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06
Abstract:
There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a body layer of a first conductivity type; an active layer of a second conductivity type, contacting an upper portion of the body layer; and a field limiting ring of a first conductivity type, formed in an upper portion of the active layer.
Public/Granted literature
- US20140175612A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-06-26
Information query
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