Invention Grant
US08969961B2 Field-effect transistor and method for producing a field-effect transistor
有权
场效应晶体管及其制造场效应晶体管的方法
- Patent Title: Field-effect transistor and method for producing a field-effect transistor
- Patent Title (中): 场效应晶体管及其制造场效应晶体管的方法
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Application No.: US12742219Application Date: 2008-11-07
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Publication No.: US08969961B2Publication Date: 2015-03-03
- Inventor: Jong Mun Park , Verena Vescoli , Rainer Minixhofer
- Applicant: Jong Mun Park , Verena Vescoli , Rainer Minixhofer
- Applicant Address: AT Unterpremstaetten
- Assignee: AMS AG
- Current Assignee: AMS AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: EP07120405 20071109
- International Application: PCT/EP2008/065157 WO 20081107
- International Announcement: WO2009/060078 WO 20090514
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/66
Abstract:
A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conduction type, a source region (13) of the first conduction type, a drift region (16) and a channel region (14) of a second conduction type which is opposite to the first conduction type. The drift region (16) comprises at least two stripes (15, 32) of the first conduction type which extend from the drain region (12) in a direction towards the source region (13). The channel region (14) is arranged between the drift region (16) and the source region (13).
Public/Granted literature
- US20100308404A1 Field-Effect Transistor and Method for Producing a Field-Effect Transistor Public/Granted day:2010-12-09
Information query
IPC分类:
