A multi-gate semiconductor device with inter-gate conductive regions being connected to balance resistors is provided. The multi-gate semiconductor device comprises a substrate, a multilayer structure formed upon the substrate, a first ohmic electrode, a second ohmic electrode, a plural of gate electrodes, at least one conductive region, and at least one resistive component. When put into practice, the multi-gate semiconductor device is advantageous in reducing the voltage drop along the conductive region with a minimal change in device layout, improving the OFF-state linearity while retaining a low insertion loss, and minimizing the area occupied by the resistor and hence the total chip size.