Invention Grant
US08969999B2 Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same
有权
鳍状场效应晶体管（FinFET），金属半导体合金熔丝器件及其制造方法
- Patent Title: Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same
- Patent Title (中): 鳍状场效应晶体管（FinFET），金属半导体合金熔丝器件及其制造方法
-
Application No.: US13283127Application Date: 2011-10-27
-
Publication No.: US08969999B2Publication Date: 2015-03-03
- Inventor: Minchang Liang , Shien-Yang Wu , Wei-Chang Kung
- Applicant: Minchang Liang , Shien-Yang Wu , Wei-Chang Kung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/52 ; H01L23/525 ; H01L27/112 ; H01L29/78 ; H01L27/105
Abstract:
A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.
Public/Granted literature
Information query
IPC分类:
