Invention Grant
- Patent Title: Vertical conductive connections in semiconductor substrates
- Patent Title (中): 半导体衬底中的垂直导电连接
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Application No.: US13160757Application Date: 2011-06-15
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Publication No.: US08970006B2Publication Date: 2015-03-03
- Inventor: Crocifisso Marco Antonio Renna
- Applicant: Crocifisso Marco Antonio Renna
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMicroelectronics S.R.L.
- Current Assignee: STMicroelectronics S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITTO2010A0514 20100615
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/768 ; H01L23/48
Abstract:
An embodiment of a die comprising: a semiconductor body including a front side, a back side, and a lateral surface; an electronic device, formed in said semiconductor body and including an active area facing the front side; a vertical conductive connection, extending through the semiconductor body and defining a conductive path between the front side and the back side of the semiconductor body; and a conductive contact, defining a conductive path on the front side of the semiconductor body, between the active area and the vertical conductive connection, wherein the vertical conductive connection is formed on the lateral surface of the die, outside the active area.
Public/Granted literature
- US20110304024A1 VERTICAL CONDUCTIVE CONNECTIONS IN SEMICONDUCTOR SUBSTRATES Public/Granted day:2011-12-15
Information query
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