Invention Grant
- Patent Title: Semiconductor device and process for producing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13736385Application Date: 2013-01-08
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Publication No.: US08970007B2Publication Date: 2015-03-03
- Inventor: Hajime Wada
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2012-006752 20120117
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/768 ; H01L23/00 ; H01L23/58
Abstract:
A semiconductor device includes: a substrate in which a product region and scribe regions are defined; a 1st insulation film formed above the substrate; a metal film in the 1st insulation film, disposed within the scribe regions in such a manner as to surround the product region; a 2nd insulation film formed on the 1st insulation film and the metal film; a 1st groove disposed more inside than the metal film in such a manner as to surround the product region, and reaching from a top surface of the 2nd insulation film to a position deeper than a top surface of the metal film; and a 2nd groove disposed more outside than the metal film in such a manner as to surround the metal film, and reaching from the top surface of the 2nd insulation film to a position deeper than the top surface of the metal film.
Public/Granted literature
- US20130181329A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2013-07-18
Information query
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