Invention Grant
- Patent Title: Wafer and integrated circuit chip having a crack stop structure
- Patent Title (中): 具有裂纹停止结构的晶片和集成电路芯片
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Application No.: US13829582Application Date: 2013-03-14
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Publication No.: US08970008B2Publication Date: 2015-03-03
- Inventor: Achim Gratz , Thimo Schindelar
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/78
Abstract:
A wafer has a number of IC areas and a kerf area arranged between the IC areas. The kerf area has a dicing area, a crack stop structure arranged between an IC area and a dicing area, and a trench arranged between the crack stop structure and the dicing area. The crack stop structure includes an extended layer extending beyond the crack stop structure towards the dicing area.
Public/Granted literature
- US20140264767A1 Wafer, Integrated Circuit Chip and Method for Manufacturing an Integrated Circuit Chip Public/Granted day:2014-09-18
Information query
IPC分类:
