Invention Grant
- Patent Title: Wafer-level die attach metallization
- Patent Title (中): 晶圆级芯片附着金属化
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Application No.: US13834196Application Date: 2013-03-15
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Publication No.: US08970010B2Publication Date: 2015-03-03
- Inventor: Fabian Radulescu , Helmut Hagleitner , Terry Alcorn , William T. Pulz
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L23/52 ; H01L23/532 ; H01L21/768 ; H01L21/78

Abstract:
Embodiments of a semiconductor wafer having wafer-level die attach metallization on a back-side of the semiconductor wafer, resulting semiconductor dies, and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor wafer includes a semiconductor structure and a front-side metallization that includes front-side metallization elements for a number of semiconductor die areas. The semiconductor wafer also includes vias that extend from a back-side of the semiconductor structure to the front-side metallization elements. A back-side metallization is on the back-side of the semiconductor structure and within the vias. For each via, one or more barrier layers are on a portion of the back-side metallization that is within the via and around a periphery of the via. The semiconductor wafer further includes wafer-level die attach metallization on the back-side metallization other than the portions of the back-side metallization that are within the vias and around the peripheries of the vias.
Public/Granted literature
- US20140264868A1 WAFER-LEVEL DIE ATTACH METALLIZATION Public/Granted day:2014-09-18
Information query
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