Invention Grant
- Patent Title: Semiconductor devices with dielectric layers
- Patent Title (中): 具有介电层的半导体器件
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Application No.: US14020021Application Date: 2013-09-06
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Publication No.: US08970014B2Publication Date: 2015-03-03
- Inventor: Ha-jin Lim , Hyung-Suk Jung , Yun-Ki Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0048138 20080523
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
Semiconductor devices and methods of forming the semiconductor device are provided, the semiconductor devices including a first dielectric layer on a substrate, and a second dielectric layer on the first dielectric layer. The first dielectric layer has a carbon concentration lower than the second dielectric layer.
Public/Granted literature
- US20140001606A1 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME Public/Granted day:2014-01-02
Information query
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