Invention Grant
- Patent Title: Thermally enhanced semiconductor package
- Patent Title (中): 热增强半导体封装
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Application No.: US14019962Application Date: 2013-09-06
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Publication No.: US08970021B2Publication Date: 2015-03-03
- Inventor: Eung San Cho
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/373 ; H01L23/498 ; H01L23/00 ; H01L21/78 ; H01L25/07 ; H01L25/18

Abstract:
One exemplary disclosed embodiment comprises a semiconductor package including an inside pad, a transistor, and a conductive clip coupled to the inside pad and a terminal of the transistor. A top surface of the conductive clip is substantially exposed at the top of the package, and a side surface of the conductive clip is exposed at a side of the package. By supporting the semiconductor package on an outside pad during the fabrication process and by removing the outside pad during singulation, the conductive clip may be kept substantially parallel and in alignment with the package substrate while optimizing the package form factor compared to conventional packages. The exposed top surface of the conductive clip may be further attached to a heat sink for enhanced thermal dissipation.
Public/Granted literature
- US20140001614A1 Thermally Enhanced Semiconductor Package Public/Granted day:2014-01-02
Information query
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