Invention Grant
- Patent Title: Semiconductor substrate and method of fabricating the same
- Patent Title (中): 半导体衬底及其制造方法
-
Application No.: US13677939Application Date: 2012-11-15
-
Publication No.: US08970038B2Publication Date: 2015-03-03
- Inventor: Chun-Hung Lu , Chung-Te Yuan , Guang-Hwa Ma
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101125749A 20120718
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/522 ; H01L21/768 ; H01L23/14 ; H01L23/498

Abstract:
A semiconductor substrate is provided, including: a substrate; a plurality of conductive through vias embedded in the substrate; a first dielectric layer formed on the substrate; a metal layer formed on the first dielectric layer; and a second dielectric layer formed on the metal layer. As such, when a packaging substrate is disposed on the second dielectric layer, the metal layer provides a reverse stress to balance thermal stresses caused by the first and second dielectric layers, thereby preventing warpage of the semiconductor substrate.
Public/Granted literature
- US20140021617A1 SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-01-23
Information query
IPC分类: