Invention Grant
US08970038B2 Semiconductor substrate and method of fabricating the same 有权
半导体衬底及其制造方法

Semiconductor substrate and method of fabricating the same
Abstract:
A semiconductor substrate is provided, including: a substrate; a plurality of conductive through vias embedded in the substrate; a first dielectric layer formed on the substrate; a metal layer formed on the first dielectric layer; and a second dielectric layer formed on the metal layer. As such, when a packaging substrate is disposed on the second dielectric layer, the metal layer provides a reverse stress to balance thermal stresses caused by the first and second dielectric layers, thereby preventing warpage of the semiconductor substrate.
Public/Granted literature
Information query
Patent Agency Ranking
0/0