Invention Grant
US08970045B2 Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
有权
用于制造包括具有导电通孔的插入件的半导体结构的方法以及相关结构和装置
- Patent Title: Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
- Patent Title (中): 用于制造包括具有导电通孔的插入件的半导体结构的方法以及相关结构和装置
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Application No.: US13397954Application Date: 2012-02-16
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Publication No.: US08970045B2Publication Date: 2015-03-03
- Inventor: Mariam Sadaka
- Applicant: Mariam Sadaka
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Main IPC: H01L23/522
- IPC: H01L23/522

Abstract:
Methods of fabricating semiconductor devices that include interposers include the formation of conductive vias through a material layer on a recoverable substrate. A carrier substrate is bonded over the material layer, and the recoverable substrate is then separated from the material layer to recover the recoverable substrate. A detachable interface may be provided between the material layer and the recoverable substrate to facilitate the separation. Electrical contacts that communicate electrically with the conductive vias may be formed over the material layer on a side thereof opposite the carrier substrate. Semiconductor structures and devices are formed using such methods.
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