Invention Grant
- Patent Title: Method for manufacturing magnetoresistance effect element
- Patent Title (中): 制造磁阻效应元件的方法
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Application No.: US14128722Application Date: 2012-06-19
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Publication No.: US08970213B2Publication Date: 2015-03-03
- Inventor: Tomohiko Toyosato , Mihoko Nakamura , Kazuhiro Kimura , Masayoshi Ikeda
- Applicant: Tomohiko Toyosato , Mihoko Nakamura , Kazuhiro Kimura , Masayoshi Ikeda
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2011-140392 20110624
- International Application: PCT/JP2012/065562 WO 20120619
- International Announcement: WO2012/176747 WO 20121227
- Main IPC: G01R33/02
- IPC: G01R33/02 ; H01L43/12

Abstract:
In a method for manufacturing the functional element, a protective film covering an underlayer, a patterned multilayer film, and a patterned cap layer are formed, and the underlayer is then processed without newly forming a resist. Thereby, an electrode can be formed in steps less than ever before. Since the protective film formed on the patterned multilayer film and the patterned cap layer is used as a mask, the problem of the misregistration can be prevented.
Public/Granted literature
- US20140138347A1 METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT Public/Granted day:2014-05-22
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