Invention Grant
- Patent Title: Radio frequency switch circuit
- Patent Title (中): 射频开关电路
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Application No.: US13779675Application Date: 2013-02-27
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Publication No.: US08970279B2Publication Date: 2015-03-03
- Inventor: Sang Hoon Ha , Sung Hwan Park , Sang Hee Kim , Nam Heung Kim , Hyo Gun Bae
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon, Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0151457 20121221
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/16

Abstract:
There is provided a radio frequency switch circuit including a first switch circuit unit connected between a first node connected to a first signal port and a common node connected to a common port, and operated according to a first control signal, a second switch circuit unit connected between a second node connected to a second signal port and the common node and operated according to a second control signal having a phase opposite to that of the first control signal, a first shunt circuit unit connected between the second node and a common source node and operated according to the first control signal, a second shunt circuit unit connected between the first node and the common source node, and a source voltage generating unit generating a source voltage, wherein the source voltage is lower than a high level of the first control signal and higher than a ground potential.
Public/Granted literature
- US20140176225A1 RADIO FREQUENCY SWITCH CIRCUIT Public/Granted day:2014-06-26
Information query
IPC分类: