Invention Grant
- Patent Title: High frequency switch
- Patent Title (中): 高频开关
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Application No.: US13766368Application Date: 2013-02-13
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Publication No.: US08970282B2Publication Date: 2015-03-03
- Inventor: Chan Yong Jeong
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon Gyunggi-Do
- Agency: McDermott Will and Emery LLP
- Priority: KR10-2012-0133703 20121123
- Main IPC: H03K5/08
- IPC: H03K5/08 ; H03L5/00 ; H03K17/00

Abstract:
There is provided a high frequency switch including: a first signal transferring unit including a plurality of first switching devices; a second signal transferring unit including a plurality of second switching devices; a first shunting unit including a plurality of third switching devices; and a second shunting unit including a plurality of fourth switching devices.
Public/Granted literature
- US20140145776A1 HIGH FREQUENCY SWITCH Public/Granted day:2014-05-29
Information query
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