Invention Grant
- Patent Title: Integrated passives and power amplifier
- Patent Title (中): 集成无源和功率放大器
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Application No.: US13235158Application Date: 2011-09-16
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Publication No.: US08970516B2Publication Date: 2015-03-03
- Inventor: Justin Phelps Black , Ravindra V. Shenoy , Evgeni Petrovich Gousev , Aristotele Hadjichristos , Thomas Andrew Myers , Jonghae Kim , Mario Francisco Velez , Je-Hsiung Jeffrey Lan , Chi Shun Lo
- Applicant: Justin Phelps Black , Ravindra V. Shenoy , Evgeni Petrovich Gousev , Aristotele Hadjichristos , Thomas Andrew Myers , Jonghae Kim , Mario Francisco Velez , Je-Hsiung Jeffrey Lan , Chi Shun Lo
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Weaver Austin Villeneuve & Sampson
- Main IPC: G06F3/041
- IPC: G06F3/041 ; G02B26/00 ; H01L21/56 ; H01L23/31

Abstract:
This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting substrate or a glass substrate. The first substrate may be a glass substrate. The first substrate may include conductive vias. A power combiner circuit may be deposited on a first side of the first substrate. The power combiner circuit may include passive devices deposited on at least the first side of the first substrate. The integrated circuit may include a power amplifier circuit disposed on and configured for electrical connection with the power combiner circuit, to form a power amplification system. The conductive vias may include thermal vias configured for conducting heat from the power amplification system and/or interconnect vias configured for electrical connection between the power amplification system and a conductor on a second side of the first substrate.
Public/Granted literature
- US20120075216A1 INTEGRATED PASSIVES AND POWER AMPLIFIER Public/Granted day:2012-03-29
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