Invention Grant
- Patent Title: Field-line repeater (FLR) structure of a sense array
- Patent Title (中): 感应阵列的场线中继器(FLR)结构
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Application No.: US14015720Application Date: 2013-08-30
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Publication No.: US08970796B2Publication Date: 2015-03-03
- Inventor: Oleksandr Hoshtanar
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lowenstein Sandler LLP
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; G06F3/044 ; G06F3/041

Abstract:
Apparatuses and methods of field-line repeater structures for sense arrays are described. One apparatus includes a substrate, a capacitive-sense array with electrodes disposed on one or more sides of the substrate in one or more layers and a protective cover layer disposed to cover the capacitive-sense array. A coating film is disposed over the protective cover layer and a field-line repeater (FLR) structure of floating electrodes is disposed between the coating film and the protective cover layer.
Public/Granted literature
- US20140320757A1 FIELD-LINE REPEATER (FLR) STRUCTURE OF A SENSE ARRAY Public/Granted day:2014-10-30
Information query
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