Invention Grant
- Patent Title: Memory architecture
- Patent Title (中): 内存架构
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Application No.: US13560305Application Date: 2012-07-27
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Publication No.: US08971095B2Publication Date: 2015-03-03
- Inventor: Kuoyuan (Peter) Hsu
- Applicant: Kuoyuan (Peter) Hsu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A write circuit in a memory array includes a global data line, a switching circuit, and a first local data line coupled with the switching circuit and with a first plurality of memory cells. The global data line is configured to receive data to be written to the memory cell from outside of the memory array. The switching circuit is configured to electrically couple the global data line with the first local data line to transfer the data to be written to a memory cell of the first plurality of memory cells to the first local data line. The memory cell of the first plurality of memory cells is configured to receive data on the first local data line.
Public/Granted literature
- US20140032835A1 MEMORY ARCHITECTURE Public/Granted day:2014-01-30
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