Invention Grant
- Patent Title: Memory programming to reduce thermal disturb
- Patent Title (中): 存储器编程以减少热干扰
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Application No.: US13530732Application Date: 2012-06-22
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Publication No.: US08971104B2Publication Date: 2015-03-03
- Inventor: Andrea Redaelli
- Applicant: Andrea Redaelli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
A resistive memory array is programmed such that particular adjacent pairs of memory cells along a bit line having a back-to-back relationship are programmed together. The memory cells having the back-to-back relationship share a continuous chalcogenide material and a SiN material.
Public/Granted literature
- US20130343119A1 MEMORY PROGRAMMING TO REDUCE THERMAL DISTURB Public/Granted day:2013-12-26
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