Invention Grant
US08971107B2 Emulation of static random access memory (SRAM) by magnetic random access memory (MRAM)
有权
磁性随机存取存储器(MRAM)对静态随机存取存储器(SRAM)的仿真
- Patent Title: Emulation of static random access memory (SRAM) by magnetic random access memory (MRAM)
- Patent Title (中): 磁性随机存取存储器(MRAM)对静态随机存取存储器(SRAM)的仿真
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Application No.: US14281873Application Date: 2014-05-19
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Publication No.: US08971107B2Publication Date: 2015-03-03
- Inventor: Petro Estakhri , Ebrahim Abedifard , Frederick Jaffin , Siamack Nemazie
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/14
- IPC: G11C11/14 ; G11C11/16 ; G11C8/04 ; G11C7/10

Abstract:
A magnetic memory system includes a magnetic random access memory (MRAM) including a plurality of magnetic memory banks and operative to store data during a write operation initiated by a write command. The magnetic memory system further includes a first-in-first-out (FIFO) interface device coupled to the MRAM and including a plurality of FIFOs Each of the magnetic memory banks is coupled to a respective one of the plurality of FIFOs, the FIFO being operative to queue write commands on a per magnetic memory bank basis and further operative to issue the queued write commands at a time when the MRAM is not in use, wherein concurrent write operations are performed to at least two of the plurality of magnetic memory banks.
Public/Granted literature
- US20140269041A1 EMULATION OF STATIC RANDOM ACCESS MEMORY (SRAM) BY MAGNETIC RANDOM ACCESS MEMORY (MRAM) Public/Granted day:2014-09-18
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