Invention Grant
- Patent Title: Method of programming a multi-level memory device
- Patent Title (中): 编程多级存储器件的方法
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Application No.: US14046297Application Date: 2013-10-04
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Publication No.: US08971112B2Publication Date: 2015-03-03
- Inventor: Luca Crippa , Rino Micheloni
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: EP05106972 20050728; EP06115106 20060607
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/34 ; G11C16/26 ; G11C16/12 ; G11C16/06 ; G11C11/56
Abstract:
Method of programming a multi-level memory cell may include transferring one or more values between an auxiliary latch of the multi-level memory cell and a most significant bit (MSB) latch of the multi-level memory cell and/or between the auxiliary latch and a least significant bit (LSB) latch of the multi-level memory cell while programming the multi-level memory cell.
Public/Granted literature
- US20140036588A1 METHOD OF PROGRAMMING A MULTI-LEVEL MEMORY DEVICE Public/Granted day:2014-02-06
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