A memory device automatically correcting the effect of collisions of high-energy particles, comprising at least one memory cell, and further comprising: retention means for retaining, for a determined period, a single copy of the stored value stored in said memory cell; detection means for detecting a change of state of said memory cell, by comparing the stored value stored in said memory cell with the value in retention in said retention means; and management means suitable for determining whether a detected change of state of said memory cell is due to a high-energy particle and, in which case, to automatically command a reloading of the stored value stored in said retention means into said memory cell.