Invention Grant
- Patent Title: Method for analyzing growth of void of resin in a porous material
- Patent Title (中): 分析多孔材料中树脂空隙生长的方法
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Application No.: US13226528Application Date: 2011-09-07
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Publication No.: US08972226B2Publication Date: 2015-03-03
- Inventor: Hiroki Nakatsuchi , Tsutomu Kono , Keiji Suzuki , Mitsuru Onoda , Kazuo Goto , Yasuaki Kageyama , Takahiro Sato
- Applicant: Hiroki Nakatsuchi , Tsutomu Kono , Keiji Suzuki , Mitsuru Onoda , Kazuo Goto , Yasuaki Kageyama , Takahiro Sato
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2010-231764 20101014
- Main IPC: G06G7/48
- IPC: G06G7/48 ; G06G7/56 ; G06F17/50

Abstract:
The present invention provides a method for analyzing growth of void of resin in a porous material which comprising the steps of inputting data of the shape of a porous material filled with a resin material, and dividing the shape of the porous material into three-dimensional solid elements; inputting physical properties of the porous material, and boundary conditions including a pressure that is applied to the porous material; obtaining a resin-density distribution in the porous material through fluid analysis using a database obtained by experimentally measuring in advance a temporal change in a volume of gas generated from the resin material and porous material during heating, changes in a compressive force and compressive displacement respectively occurring when the porous material impregnated with the resin is compressed, and a change in a flow resistance of the resin; and comprehensively grasping production, growth, and distribution of voids deriving from gas generation.
Public/Granted literature
- US20120095731A1 METHOD FOR ANALYZING GROWTH OF VOID OF RESIN IN A POROUS MATERIAL Public/Granted day:2012-04-19
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