Invention Grant
US08972675B2 Efficient post write read in three dimensional nonvolatile memory
有权
在三维非易失性存储器中高效后写入读取
- Patent Title: Efficient post write read in three dimensional nonvolatile memory
- Patent Title (中): 在三维非易失性存储器中高效后写入读取
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Application No.: US14280282Application Date: 2014-05-16
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Publication No.: US08972675B2Publication Date: 2015-03-03
- Inventor: Chris Avila , Gautam A. Dusija , Jian Chen
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F12/02 ; G11C16/34 ; G11C29/00
Abstract:
Data that is stored in a higher error rate format in a 3-D nonvolatile memory is backed up in a lower error rate format. Later, the higher error rate copy is sampled to determine if it is acceptable. A sampling pattern samples all word lines of a string and at least one word line of each string of the block.
Public/Granted literature
- US20150006790A1 EFFICIENT POST WRITE READ IN THREE DIMENSIONAL NONVOLATILE MEMORY Public/Granted day:2015-01-01
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