Invention Grant
US08972819B2 Memory circuit incorporating radiation-hardened memory scrub engine
有权
内存电路采用辐射硬化记忆擦洗引擎
- Patent Title: Memory circuit incorporating radiation-hardened memory scrub engine
- Patent Title (中): 内存电路采用辐射硬化记忆擦洗引擎
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Application No.: US13684105Application Date: 2012-11-21
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Publication No.: US08972819B2Publication Date: 2015-03-03
- Inventor: Wesley H. Morris , David R. Gifford , Rex E. Lowther
- Applicant: Silicon Space Technology Corporation
- Applicant Address: US TX Austin
- Assignee: Silicon Space Technology Corporation
- Current Assignee: Silicon Space Technology Corporation
- Current Assignee Address: US TX Austin
- Agency: Howison & Arnott, LLP
- Main IPC: H03M13/00
- IPC: H03M13/00 ; G06F11/07 ; G11C8/00 ; H03K19/003 ; G06F11/10 ; G06F11/18

Abstract:
An example integrated circuit includes a first memory array including a first plurality of data groups, each such data group including a respective plurality of data bits. The integrated circuit also includes a first error detection and correction (EDAC) circuit configured to detect and correct an error in a data group read from the first memory array. The integrated circuit also includes a first scrub circuit configured to access in a sequence each of the first plurality of data groups to correct any detected errors therein. Both the first EDAC circuit and the first scrub circuit include spatially redundant circuitry. The first EDAC circuit and the first scrub circuit may include buried guard ring (BGR) structures, and may include parasitic isolation device (PID) structures. The spatially redundant circuitry may include dual interlocked storage cell (DICE) circuits, and may include temporal filtering circuitry.
Public/Granted literature
- US20130166990A1 MEMORY CIRCUIT INCORPORATING RADIATION-HARDENED MEMORY SCRUB ENGINE Public/Granted day:2013-06-27
Information query
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