A vibration layer is formed by the AD method on a cavity plate before forming pressure chambers, a common electrode is formed on the vibration layer, and a piezoelectric layer is formed on the common electrode by the AD method. Subsequently, the pressure chambers are formed in the cavity plate by the etching. After that, individual electrodes are formed on the piezoelectric layer. Subsequently, the stack of the cavity plate, the vibration layer, the common electrode, the piezoelectric layer, and the individual electrodes is heated at about 850° C. to simultaneously perform the annealing of the piezoelectric layer and the sintering of the individual electrodes and the common electrode. Accordingly, the atoms of the cavity plate are suppressed from being diffused into the driving portions of the piezoelectric layer.